gbpc1005 thru gbpc110 vishay general semiconductor document number: 88611 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 glass passivated single-phase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit boards ? typical i r less than 0.1 a ? high surge current capability ? high case dielectric strength 1500 v rms ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for switch ing power supply, home appliances, office equipment, industrial automation applications. mechanical data case: gbpc1 epoxy meets ul 94v-0 flammability rating terminals: silver plated lead s, solderable per j-std-002 and jesd22-b102 e4 suffix for consumer grade polarity: as marked, positive lead by belevled corner mounting torque: 10 cm-kg (8.8 inches-lbs) max. recommended torque: 5.7 cm-kg (5 inches-lbs) e4 primary characteristics i f(av) 3 a v rrm 50 v to 1000 v i fsm 60 a i r 5 a v f 1.0 v t j max. 150 c case style gbpc1 ~ ~ ~ ~ notes: (1) unit mounted on 4.0 x 4.0 x 0.11" thick (10.5 x 10.5 x 0.3 cm) aluminum plate (2) unit mounted on p.c.b. at 0.375" (9.5 mm) lead length with 0.5 x 0.5" (12 x 12 mm) copper pads maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gbpc 1005 gbpc 101 gbpc 102 gbpc 104 gbpc 106 gbpc 108 gbpc 110 unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms bridge input voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified output current at t c = 60 c (1) t a = 25 c (2) i f(av) 3.0 2.0 a peak forward surge current single sine-wave superimposed on rated load i fsm 60 a rating for fusing (t < 8.3 ms) i 2 t15a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
gbpc1005 thru gbpc110 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88611 revision: 15-apr-08 2 note: (1) bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for ma ximum heat transfer with #6 screw ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol gbpc 1005 gbpc 101 gbpc 102 gbpc 104 gbpc 106 gbpc 108 gbpc 110 unit maximum instantaneous forward voltage drop per diode 1.5 a v f 1.0 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c t a = 125 c i r 5.0 500 a typical junction capacitance per diode 4.0 v, 1 mhz c j 21 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gbpc 1005 gbpc 101 gbpc 102 gbpc 104 gbpc 106 gbpc 108 gbpc 110 unit typical thermal resistance (1) r ja r jc 12 8.0 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode gbpc106-e4/51 2.5 51 100 paper box figure 1. derating curve output rectified current 0 50 100 150 0 1.0 2.0 3.0 4.0 5.0 case temperat u re, t c heatsink mo u nting 4.0 x 4.0 x 0.11" thk. (10.5 x 10.5 x 0.3 cm) al. plate 60 hz resisti v e or ind u cti v e load am b ient temperat u re, t a p.c.b. mo u nting 0.375 " (9.5 mm) lead length am b ient temperat u re (c) a v erage for w ard o u tp u t c u rrent (a) figure 2. maximum non-repetitive peak forward surge current per diode 1 10 100 0 10 20 30 40 50 60 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t c = 60 c single sine- w a v e 1.0 cycle
gbpc1005 thru gbpc110 vishay general semiconductor document number: 88611 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical forward characteristics per diode figure 4. typical reverse leak age characteristics per diode 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 20 40 60 8 0 0.01 0.1 1 10 100 100 t j = 125 c t j = 25 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance per diode 0.1 1 10 100 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.01 0.1 1 10 100 0.1 1 10 100 t - heating time (s) transient thermal impedance (c/ w ) case style gbpc1 polarity sho w n on side of case: positi v e lead b y b e v eled corne r 0.750 (19.05) mi n . 0.094 (2.4) x 45 ac ac 0.040 (1.02) typ. 0.200 (5.0 8 ) 0.160 (4.06) 0.445 (11.30) 0.405 (10.29) 0.032 (0. 8 1) 0.02 8 (0.71) dia. 0.12 8 (3.25) 0.04 8 (1.22) 0.445 (11.30) 0.405 (10.29) 0.630 (16.00) 0.590 (14.9 8 ) 0.630 (16.00) 0.590 (14.9 8 ) hole for #6 scre w 0.15 8 (4.01) 0.142 (3.61) dia.
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